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FDMS86581-F085

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FDMS86581-F085

MOSFET N-CHANNEL 60V 30A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS86581-F085 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 30A at 25°C (Tc), with a maximum power dissipation of 50W (Tj). The device exhibits a low on-resistance of 15mOhm at 30A and 10V Vgs. Packaged in an 8-PQFN (5x6) with Tape & Reel (TR) packaging, it is suitable for surface mount applications. Key electrical parameters include a gate charge (Qg) of 19nC (max) at 10V Vgs and input capacitance (Ciss) of 881pF (max) at 30V Vds. The operating temperature range spans from -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management solutions for automotive, industrial, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)50W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds881 pF @ 30 V

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