FDMS86581
MOSFET N-CH 60V 30A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS86581 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 15mOhm at 30A and 10V gate drive. The MOSFET utilizes advanced trench MOSFET technology, delivering optimal power density and thermal performance with a maximum power dissipation of 50W (Tj).
Encased in an 8-PQFN (5x6) package, it supports surface mounting and is supplied on tape and reel for automated assembly. Key electrical parameters include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 881 pF at 30V. The operating temperature range is -55°C to 175°C (Tj). This component is widely implemented in computing, industrial power supplies, and automotive systems requiring robust and efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 881 pF @ 30 V |