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FDMS86500L

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FDMS86500L

MOSFET N-CH 60V 25A/80A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS86500L is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a 60V Drain-Source Voltage (Vdss) and offers a continuous drain current of 25A at 25°C ambient temperature and 80A at 25°C case temperature. The Rds(on) is specified as a maximum of 2.5mOhm at 25A and 10V Vgs, with drive voltages ranging from 4.5V to 10V. The device exhibits a maximum gate charge of 165 nC at 10V and a maximum input capacitance of 12530 pF at 30V. Power dissipation is rated at 2.5W (Ta) and 104W (Tc). Packaged in an 8-PQFN (5x6) with Tape & Reel (TR) packaging, the FDMS86500L is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds application in power supplies, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12530 pF @ 30 V

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