FDMS86369-F085
MOSFET N-CH 80V 65A POWER56Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDMS86369-F085 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 65 A at 25°C, with a maximum power dissipation of 107 W (Tc). The low on-resistance (Rds On) of 7.5 mOhm at 65 A and 10 V gate drive, coupled with a gate charge (Qg) of 46 nC at 10 V, ensures efficient switching performance. Manufactured with MOSFET technology in an 8-PowerVDFN package, this component is surface mounted for robust integration. Qualified to AEC-Q101 and featuring a broad operating temperature range of -55°C to 175°C (TJ), the FDMS86369-F085 is well-suited for automotive applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | Power56 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 40 V |
| Qualification | AEC-Q101 |
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