Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDMS86368-F085

Banner
productimage

FDMS86368-F085

MOSFET N-CH 80V 80A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMS86368-F085 is an 80V N-Channel PowerTrench® MOSFET, qualified to AEC-Q101 for automotive applications. This device features a low Rds(on) of 4.5mOhm at 80A and 10V Vgs, with a continuous drain current capability of 80A at 25°C. The high power dissipation of 214W at 25°C (Tc) and a maximum junction temperature of 175°C make it suitable for demanding power management tasks. Key parameters include a gate charge of 75 nC at 10V and input capacitance of 4350 pF at 40V. The FDMS86368-F085 is supplied in an 8-PowerVDFN (Power56) package, mounted via surface mount technology, and available on tape and reel.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)214W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePower56
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 40 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDN338P

MOSFET P-CH 20V 1.6A SUPERSOT3

product image
FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

product image
FDC6420C

MOSFET N/P-CH 20V 3A/2.2A SSOT6