FDMS86200E
FET 150V 18.0 MOHM PQFN56Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMS86200E N-Channel Power MOSFET. This component offers a 150V drain-source breakdown voltage and a low on-resistance of 18.0 mOhm. Featuring a PQFN56 package, it supports a continuous drain current of 9.6A at ambient temperature and up to 35A at case temperature. The FDMS86200E is suitable for power management applications across various industries, including industrial automation, computing, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | - |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
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