FDMS86101E
MOSFET N-CH 100V 12.4A/60A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS86101E is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 12.4A at 25°C ambient or 60A at 25°C case temperature. With a low on-resistance (Rds On) of 8mOhm maximum at 13A and 10V gate-source voltage, it minimizes conduction losses. The FDMS86101E offers a maximum power dissipation of 2.5W (Ta) or 104W (Tc), supporting efficient thermal management. Key electrical parameters include a maximum gate charge (Qg) of 55 nC at 10V and a maximum input capacitance (Ciss) of 3000 pF at 50V. This MOSFET utilizes a surface mount 8-PQFN (5x6) package, making it suitable for high-density designs in industries such as power supplies, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.4A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V |