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FDMS86101E

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FDMS86101E

MOSFET N-CH 100V 12.4A/60A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS86101E is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 12.4A at 25°C ambient or 60A at 25°C case temperature. With a low on-resistance (Rds On) of 8mOhm maximum at 13A and 10V gate-source voltage, it minimizes conduction losses. The FDMS86101E offers a maximum power dissipation of 2.5W (Ta) or 104W (Tc), supporting efficient thermal management. Key electrical parameters include a maximum gate charge (Qg) of 55 nC at 10V and a maximum input capacitance (Ciss) of 3000 pF at 50V. This MOSFET utilizes a surface mount 8-PQFN (5x6) package, making it suitable for high-density designs in industries such as power supplies, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 50 V

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