FDMS8560S
MOSFET N-CH 25V 30A/70A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8560S is an N-Channel Power Trench® SyncFET™ MOSFET designed for efficient power management applications. This component offers a 25V drain-source breakdown voltage and a continuous drain current capability of 30A at ambient temperature (Ta) and 70A at case temperature (Tc). With a maximum Rds(on) of 1.8 mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device features a low gate charge of 68 nC and an input capacitance of 4350 pF, optimizing switching performance. It is packaged in an 8-PQFN (5x6) surface mount configuration, suitable for high-density designs. The FDMS8560S is utilized across various industries, including consumer electronics, computing, and industrial power systems, benefiting from its low thermal resistance and high power dissipation capabilities of 2.5W (Ta) and 65W (Tc). It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 13 V |
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