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FDMS8350L

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FDMS8350L

MOSFET N-CH 40V 47A/200A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS8350L is a PowerTrench® N-Channel MOSFET designed for efficient power switching. This device features a 40V drain-to-source voltage (Vdss) and offers a continuous drain current capability of 47A at 25°C ambient temperature (Ta) and 200A at 25°C case temperature (Tc). With a low on-resistance of 0.85 mOhm maximum at 47A and 10V Vgs, it minimizes conduction losses. The FDMS8350L supports drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 242 nC at 10V. Its input capacitance (Ciss) is 17500 pF maximum at 20V. Packaged in an 8-PQFN (5x6) with tape and reel packaging, it is suitable for surface mounting and operates within a temperature range of -55°C to 150°C. Maximum power dissipation is 2.7W (Ta) and 113W (Tc). This component finds application in various power management solutions across automotive and industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs0.85mOhm @ 47A, 10V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds17500 pF @ 20 V

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