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FDMS8050ET30

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FDMS8050ET30

MOSFET N-CH 30V 55A/423A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS8050ET30 is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This device features a Vds of 30V and offers a continuous drain current of 55A at ambient temperature and 423A at case temperature. Its low on-resistance, specified at 0.65mOhm maximum at 55A and 10V Vgs, ensures minimal conduction losses. The FDMS8050ET30 supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 285 nC at 10V. With a maximum power dissipation of 3.3W (Ta) and 180W (Tc), this MOSFET is suitable for demanding thermal environments. Packaged in an 8-PQFN (5x6) and supplied on tape and reel, it is engineered for surface mounting. The operating temperature range is from -55°C to 175°C. This component finds application in power supply units, motor control, and battery management systems within the automotive and industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs0.65mOhm @ 55A, 10V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id3V @ 750µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds22610 pF @ 15 V

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