FDMS8050ET30
MOSFET N-CH 30V 55A/423A POWER56Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8050ET30 is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This device features a Vds of 30V and offers a continuous drain current of 55A at ambient temperature and 423A at case temperature. Its low on-resistance, specified at 0.65mOhm maximum at 55A and 10V Vgs, ensures minimal conduction losses. The FDMS8050ET30 supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 285 nC at 10V. With a maximum power dissipation of 3.3W (Ta) and 180W (Tc), this MOSFET is suitable for demanding thermal environments. Packaged in an 8-PQFN (5x6) and supplied on tape and reel, it is engineered for surface mounting. The operating temperature range is from -55°C to 175°C. This component finds application in power supply units, motor control, and battery management systems within the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta), 423A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.65mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 750µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22610 pF @ 15 V |