FDMS8050
MOSFET N-CHANNEL 30V 55A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8050 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 55A at 25°C (Tc), with a maximum power dissipation of 156W (Tc). Its low on-resistance of 0.65mOhm at 55A and 10V Vgs ensures high efficiency. The FDMS8050 utilizes MOSFET (Metal Oxide) technology and is packaged in an 8-PQFN (5x6) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 285 nC at 10V and input capacitance (Ciss) of 22610 pF at 15V. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly found in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.65mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 750µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22610 pF @ 15 V |