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FDMS8025S

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FDMS8025S

MOSFET N-CH 30V 24A/49A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS8025S is an N-Channel Power MOSFET from the PowerTrench® and SyncFET™ series. This component features a 30V drain-source voltage (Vdss) and offers continuous drain current capabilities of 24A at 25°C ambient (Ta) and 49A at 25°C case (Tc). With a maximum on-resistance (Rds On) of 2.8mOhm at 24A and 10V Vgs, it is designed for efficient power conversion. Key electrical characteristics include a gate charge (Qg) of 47 nC maximum at 10V Vgs and input capacitance (Ciss) of 3000 pF maximum at 15V Vds. The device supports a drive voltage range of 4.5V to 10V for optimal Rds On performance and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). The FDMS8025S is housed in an 8-PQFN (5x6) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power management applications, including computing, consumer electronics, and industrial systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 15 V

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