FDMS8025S
MOSFET N-CH 30V 24A/49A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8025S is an N-Channel Power MOSFET from the PowerTrench® and SyncFET™ series. This component features a 30V drain-source voltage (Vdss) and offers continuous drain current capabilities of 24A at 25°C ambient (Ta) and 49A at 25°C case (Tc). With a maximum on-resistance (Rds On) of 2.8mOhm at 24A and 10V Vgs, it is designed for efficient power conversion. Key electrical characteristics include a gate charge (Qg) of 47 nC maximum at 10V Vgs and input capacitance (Ciss) of 3000 pF maximum at 15V Vds. The device supports a drive voltage range of 4.5V to 10V for optimal Rds On performance and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). The FDMS8025S is housed in an 8-PQFN (5x6) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power management applications, including computing, consumer electronics, and industrial systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 15 V |
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