FDMS8020
MOSFET N-CH 30V 26A/42A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FDMS8020 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 26A at a case temperature of 25°C (26A @ Ta, 42A @ Tc). The low on-resistance (Rds On) of 2.5mOhm at 26A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 65W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 61nC @ 10V and input capacitance (Ciss) of 3800pF @ 15V. The FDMS8020 is supplied in an 8-PQFN (5x6) package and is manufactured using advanced MOSFET technology. It is commonly utilized in power supplies, voltage regulators, and automotive electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V |