FDMS7672AS
MOSFET N-CH 30V 19A/42A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMS7672AS is a high-performance N-Channel Power MOSFET from the PowerTrench® and SyncFET™ series. This device features a 30V Drain-Source Breakdown Voltage (Vds) and offers a continuous drain current of 19A at ambient temperature (Ta) and 42A at case temperature (Tc). With a maximum Rds(on) of 4mOhm at 18A and 10V Vgs, it ensures low conduction losses. The FDMS7672AS is supplied in an 8-PQFN (5x6) package for efficient surface mounting and dissipates up to 2.5W (Ta) or 46W (Tc). Key characteristics include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 2820 pF at 15V. This MOSFET is suitable for applications in power management, battery charging, and power supplies. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2820 pF @ 15 V |
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