FDMS7670AS
MOSFET N-CH 30V 22A/42A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FDMS7670AS is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component, part of the PowerTrench® and SyncFET™ series, features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 22A at ambient temperature and 42A at case temperature. With a low on-resistance (Rds On) of 3mOhm at 21A and 10V Vgs, it minimizes conduction losses. The device is housed in an 8-PQFN (5x6) package, facilitating compact board layouts. Its maximum power dissipation is 2.5W (Ta) and 65W (Tc), with a junction temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 4225 pF at 15V. This MOSFET is suitable for use in industrial, computing, and consumer electronics power systems.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4225 pF @ 15 V |
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