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FDMS7656AS

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FDMS7656AS

MOSFET N-CH 30V 31A/49A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMS7656AS is a PowerTrench®, SyncFET™ N-Channel MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 31A at ambient temperature and 49A at case temperature. The low on-resistance of 1.8mOhm at 30A and 10V gate drive, combined with optimized switching performance and minimal gate charge (133 nC max @ 10V), makes it suitable for demanding power management solutions. Packaged in an 8-PQFN (5x6) for efficient thermal dissipation, with a maximum power dissipation of 2.5W (Ta) and 96W (Tc), this MOSFET is utilized across various industries including computing, consumer electronics, and industrial power supplies. Operating temperature range is -55°C to 150°C.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8705 pF @ 15 V

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