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FDMS7580

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FDMS7580

MOSFET N-CH 25V 15A/29A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS7580 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This component features a 25V drain-source voltage (Vdss) and offers a continuous drain current of 15A at ambient temperature (Ta) and 29A at case temperature (Tc). With a maximum on-resistance (Rds On) of 7.5mOhm at 15A and 10V Vgs, it ensures low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 20 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1190 pF at 13V Vds. The FDMS7580 is housed in an 8-PQFN (5x6) package, suitable for surface mounting. It exhibits a maximum power dissipation of 2.5W (Ta) and 27W (Tc), operating within a temperature range of -55°C to 150°C. This MOSFET is frequently utilized in automotive, industrial, and computing power solutions.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 13 V

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