FDMS7580
MOSFET N-CH 25V 15A/29A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS7580 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This component features a 25V drain-source voltage (Vdss) and offers a continuous drain current of 15A at ambient temperature (Ta) and 29A at case temperature (Tc). With a maximum on-resistance (Rds On) of 7.5mOhm at 15A and 10V Vgs, it ensures low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 20 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1190 pF at 13V Vds. The FDMS7580 is housed in an 8-PQFN (5x6) package, suitable for surface mounting. It exhibits a maximum power dissipation of 2.5W (Ta) and 27W (Tc), operating within a temperature range of -55°C to 150°C. This MOSFET is frequently utilized in automotive, industrial, and computing power solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 27W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 13 V |