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FDMS7572S

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FDMS7572S

MOSFET N-CH 25V 23A/49A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMS7572S: A PowerTrench®, SyncFET™ N-Channel MOSFET designed for demanding applications. This 25V device features a low Rds(on) of 2.9mOhm at 23A and 10V Vgs, enabling efficient power conversion. With a continuous drain current capability of 23A (Ta) and 49A (Tc), and a maximum power dissipation of 46W (Tc), it is well-suited for high-current switching. The 8-PQFN (5x6) package provides excellent thermal performance and a compact footprint. Key parameters include a gate charge of 45nC (max) at 10V and input capacitance of 2780pF (max) at 13V Vds. This component is utilized in power management, computing, and consumer electronics. Operating temperature range is -55°C to 150°C.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 13 V

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