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FDMS7556S

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FDMS7556S

MOSFET N-CH 25V 35A/49A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS7556S is an N-Channel Power MOSFET from the PowerTrench® and SyncFET™ series, designed for high-efficiency power conversion applications. This component features a 25V Drain-Source Voltage (Vdss) and offers a continuous drain current capability of 35A at ambient temperature and 49A at case temperature. Its low on-resistance, specified at 1.2mOhm maximum at 35A and 10V Vgs, minimizes conduction losses. The device is housed in an 8-PQFN (5x6) package, suitable for surface mounting, and supports a wide operating temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge (Qg) of 133 nC at 10V Vgs and an input capacitance (Ciss) of 8965 pF at 13V Vds. Power dissipation is rated at 2.5W (Ta) and 96W (Tc). This MOSFET finds application in power management solutions within computing, consumer electronics, and industrial sectors.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8965 pF @ 13 V

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