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FDMS6681Z

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FDMS6681Z

MOSFET P-CH 30V 21.1A/49A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS6681Z is a P-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 21.1A at typical ambient temperature (Ta) and 49A at case temperature (Tc). Its low on-resistance of 3.2mOhms at 22.1A and 10V Vgs ensures minimal conduction losses. The FDMS6681Z offers a maximum power dissipation of 2.5W (Ta) and 73W (Tc), supported by a thermal resistance suitable for demanding power management solutions. Key electrical characteristics include a gate charge (Qg) of 241 nC at 10V and input capacitance (Ciss) of 10380 pF at 15V. The MOSFET operates with drive voltages ranging from 4.5V to 10V and has a threshold voltage (Vgs(th)) of 3V at 250µA. Packaged in an 8-PQFN (5x6) surface-mount configuration and supplied on tape and reel, this component is suitable for use in automotive, industrial, and consumer electronics power systems. The operating temperature range is -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C21.1A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 22.1A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10380 pF @ 15 V

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