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FDMS5362L-F085

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FDMS5362L-F085

MOSFET N-CH 60V 17.6A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS5362L-F085 is an N-Channel Power MOSFET from the PowerTrench® series, designed for demanding applications. This device features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 17.6A (Tc) at 25°C, with a maximum power dissipation of 41.7W (Tc). The MOSFET exhibits a low on-resistance of 33mOhm maximum at 17.6A and 10V Vgs. Key specifications include a gate charge (Qg) of 21 nC maximum at 10V Vgs and input capacitance (Ciss) of 878 pF maximum at 25V Vds. It operates over an extended temperature range of -55°C to 175°C (TJ). The FDMS5362L-F085 is supplied in an 8-PowerVDFN (Power56) surface mount package and is AEC-Q101 qualified, making it suitable for automotive applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.6A (Tc)
Rds On (Max) @ Id, Vgs33mOhm @ 17.6A, 10V
FET Feature-
Power Dissipation (Max)41.7W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePower56
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds878 pF @ 25 V
QualificationAEC-Q101

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