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FDMS5360L-F085

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FDMS5360L-F085

MOSFET N-CH 60V 60A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS5360L-F085 is an N-Channel Power Trench MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 60A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 8.5mOhm at 60A and 10V gate-source voltage, achieved with a 10V gate drive, minimizes conduction losses. Key parameters include a maximum gate charge of 72 nC at 10V and input capacitance of 3695 pF at 30V. The FDMS5360L-F085 is housed in an 8-PowerVDFN (Power56) package suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 and carrying an Automotive grade, this MOSFET is well-suited for automotive power management systems and other high-performance power conversion circuits.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePower56
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3695 pF @ 30 V
QualificationAEC-Q101

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