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FDMS3016DC

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FDMS3016DC

MOSFET N-CH 30V 18A/49A DLCOOL56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMS3016DC is an N-Channel MOSFET from the Dual Cool™, PowerTrench® series. This component features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 18A at ambient temperature (Ta) and 49A at case temperature (Tc). Maximum power dissipation is rated at 3.3W (Ta) and 60W (Tc). The device boasts a low on-resistance (Rds On) of 6mOhm at 12A and 10V gate-source voltage (Vgs). Key parameters include a maximum gate charge (Qg) of 23 nC at 10V and a maximum input capacitance (Ciss) of 1385 pF at 15V. Operating temperature ranges from -55°C to 150°C. Packaged in an 8-PQFN (5x6) with Tape & Reel (TR) packaging, this MOSFET is suitable for applications in power management and high-efficiency switching circuits across various industries.

Additional Information

Series: Dual Cool™, PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1385 pF @ 15 V

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