FDMS2D4N03S
MOSFET N-CH 30V 163A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS2D4N03S is an N-Channel Power MOSFET designed for high-current switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 163A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1.8mOhm at 28A and 10V Vgs. Key characteristics include a gate charge (Qg) of 88 nC maximum at 10V Vgs and input capacitance (Ciss) of 6540 pF maximum at 15V Vds. With a maximum power dissipation of 75W (Tc), this MOSFET is suitable for demanding power management solutions in industries such as automotive and industrial power systems. The FDMS2D4N03S is supplied in an 8-PQFN (5x6) surface mount package, with a Vgs(th) of 3V maximum at 1mA and a maximum gate-source voltage of ±20V. It operates across a temperature range of -55°C to 150°C (TJ) and is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 163A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6), Power56 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6540 pF @ 15 V |
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