FDMS1D5N03
MOSFET N-CH 30V 218A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS1D5N03 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 218A at 25°C (Tc). The low on-resistance of 1.15mOhm at 40A and 10V gate drive voltage, coupled with a maximum power dissipation of 83W (Tc), makes it suitable for demanding power management solutions. The device has a gate charge of 63 nC at 4.5V and input capacitance of 9690 pF at 15V. Packaged in an 8-PQFN (5x6) surface mount configuration, the FDMS1D5N03 operates across a temperature range of -55°C to 150°C. This MOSFET finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 218A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9690 pF @ 15 V |
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