FDMS1D4N03S
MOSFET N-CH 30V 211A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS1D4N03S is a 30V N-Channel Power MOSFET from the PowerTrench® and SyncFET™ series, packaged in an 8-PQFN (5x6) for surface mounting. This component offers a continuous drain current of 211A (Tc) and a maximum power dissipation of 74W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V, a low on-resistance (Rds On) of 1.09mOhm at 38A and 10V, and a gate charge (Qg) of 65 nC at 4.5V. The device features an integrated Schottky diode, with a maximum gate-source voltage (Vgs) of ±16V and a threshold voltage (Vgs(th)) of 3V at 1mA. Input capacitance (Ciss) is specified at 10250 pF at 15V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for demanding applications across power conversion, automotive, and industrial sectors.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 211A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.09mOhm @ 38A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10250 pF @ 15 V |
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