FDME820NZT-P
MOSFET N-CH 20V 9A MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDME820NZT-P is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 9A at 25°C (Ta). Its low on-resistance of 18mOhm is achieved at 9A and 4.5V Vgs, facilitated by a gate charge of 8.5 nC at 4.5V. With a maximum power dissipation of 700mW and a compact MicroFet 1.6x1.6 Thin (6-PowerUFDFN) package, it is suitable for space-constrained designs. The operating temperature range is -55°C to 150°C. Typical applications include power management in consumer electronics and industrial equipment.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | MicroFet 1.6x1.6 Thin |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 10 V |
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