FDME410NZT
MOSFET N-CH 20V 7A MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDME410NZT is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C, with a maximum power dissipation of 2.1W (Ta). The device exhibits a low on-resistance (Rds On) of 26mOhm at 7A and 4.5V, facilitated by a gate-source voltage (Vgs) drive range from 1.5V to 4.5V. Key electrical characteristics include a maximum gate charge (Qg) of 13 nC at 4.5V and an input capacitance (Ciss) of 1025 pF at 10V. The FDME410NZT is housed in a compact 6-PowerUFDFN (MicroFet 1.6x1.6 Thin) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in various industries, including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | MicroFet 1.6x1.6 Thin |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 10 V |
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