FDME0106NZT
MOSFET N-CHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi PowerTrench® FDME0106NZT is an N-Channel MOSFET designed for high-efficiency power management applications. Featuring a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Ta), this component offers a low on-resistance (Rds On) of 18mOhm at 9A and 4.5V Vgs. Its advanced PowerTrench® technology ensures optimized switching performance and reduced conduction losses. The device supports a wide drive voltage range from 1.8V to 4.5V and has a maximum gate charge (Qg) of 8.5 nC at 4.5V.
With a maximum power dissipation of 700mW (Ta) and low input capacitance (Ciss) of 865 pF at 10V, the FDME0106NZT is suitable for demanding thermal environments. It is packaged in a compact 6-PowerUFDFN (MicroFet 1.6x1.6 Thin) for surface mounting and operates across an extended temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in battery-powered devices, portable electronics, and power supply circuits where space and efficiency are critical. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | MicroFet 1.6x1.6 Thin |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 10 V |
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