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FDMC8884

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FDMC8884

MOSFET N-CH 30V 9A/15A 8MLP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMC8884 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This MOSFET features a 30V drain-to-source voltage and offers continuous drain current capabilities of 9A at ambient temperature and 15A at case temperature. Its low on-resistance of 19mOhm at 9A and 10V gate-source voltage minimizes conduction losses. The device exhibits a maximum gate charge of 14 nC at 10V and an input capacitance of 685 pF at 15V, contributing to efficient switching performance. With a maximum power dissipation of 2.3W (Ta) and 18W (Tc), it is suitable for demanding thermal environments. The FDMC8884 is housed in an 8-MLP (3.3x3.3) surface mount package, commonly utilized in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds685 pF @ 15 V

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