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FDMC8878

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FDMC8878

MOSFET N-CH 30V 9.6A/16.5A 8MLP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMC8878, an N-Channel PowerTrench® MOSFET, offers a 30V drain-source voltage and robust current handling capabilities with 9.6A continuous drain current at 25°C ambient and 16.5A at 25°C case. This device features a low 14mOhm maximum Rds(on) at 9.6A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. With a gate charge of 26 nC maximum at 10V and input capacitance of 1230 pF maximum at 15V, it is designed for efficient switching. The FDMC8878 dissipates up to 2.1W at 25°C ambient or 31W at 25°C case, and is packaged in an 8-MLP (3.3x3.3) surface mount configuration, supplied on tape and reel. Its operational temperature range is -55°C to 150°C. This component is utilized in various industrial applications requiring high-efficiency power switching.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 9.6A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V

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