FDMC86265P

MOSFET P-CH 150V 1A/1.8A 8MLP

Manufacturer: onsemi

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The onsemi FDMC86265P is a P-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 150V and offers a continuous drain current of 1A at ambient temperature (Ta) and 1.8A at case temperature (Tc). With a maximum power dissipation of 2.3W (Ta) and 16W (Tc), it is suitable for demanding thermal environments. The Rds On is specified at a maximum of 1.2 Ohms at 1A and 10V Vgs, indicating low conduction losses. The component utilizes a compact 8-MLP (3.3x3.3) package, facilitating high-density board designs. Key electrical characteristics include a gate charge (Qg) of 4 nC (max) at 10V and input capacitance (Ciss) of 210 pF (max) at 75V. This MOSFET is commonly employed in industrial automation, consumer electronics, and power supplies. It operates reliably across a wide temperature range of -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	8-PowerWDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	1A (Ta), 1.8A (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1A, 10V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 16W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Vgs (Max)	±25V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 75 V