FDMC86183
MOSFET N-CH 100V 47A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDMC86183 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C (Tc), with a maximum power dissipation of 52W (Tc). The device exhibits a low on-resistance of 12.8mOhm at 16A and 10V Vgs, facilitated by its advanced MOSFET technology.
The FDMC86183 is housed in an 8-PQFN (3.3x3.3) Power33 package, suitable for surface mounting and offering excellent thermal performance. Key parameters include a gate charge of 21 nC (max) at 10V Vgs and input capacitance of 1515 pF (max) at 50V Vds. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is widely used in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1515 pF @ 50 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
