FDMC8588

MOSFET N-CH 25V 16.5A/40A PWR33

Manufacturer: onsemi

Quality Control: Learn More

The onsemi FDMC8588 is an N-Channel Power Trench® MOSFET designed for efficient power management. This device features a drain-to-source voltage (Vdss) of 25V and offers a continuous drain current (Id) of 16.5A at 25°C (ambient) and 40A at 25°C (case). With a low on-resistance (Rds On) of 5mOhm at 17A and 10V, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 12 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 1228 pF at 13V. The FDMC8588 is housed in an 8-PowerTDFN package (Power33) for surface mounting, with a maximum power dissipation of 2.4W (ambient) and 26W (case). Operating temperature range is -55°C to 150°C. This component is utilized in automotive and industrial applications requiring robust power switching.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

Download Free CAD Model:

Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	16.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs	5mOhm @ 17A, 10V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id	1.8V @ 250µA
Supplier Device Package	Power33
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±12V
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1228 pF @ 13 V