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FDMC8026S

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FDMC8026S

MOSFET N-CH 30V 19A/21A 8MLP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMC8026S is an N-Channel Power MOSFET featuring onsemi's PowerTrench® and SyncFET™ technologies. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 19A at ambient temperature and 21A at case temperature. With a low on-resistance of 4.4mOhm maximum at 19A and 10V gate-source voltage, it achieves a maximum power dissipation of 2.4W (Ta) and 36W (Tc). The device is packaged in an 8-MLP (3.3x3.3) footprint, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 52 nC maximum at 10V and an input capacitance (Ciss) of 3165 pF maximum at 15V. This MOSFET is utilized in power management applications across various industries including consumer electronics and industrial automation.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3165 pF @ 15 V

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