FDMC7678
MOSFET N-CH 30V 17.5A/19.5A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMC7678 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 17.5A at ambient temperature and 19.5A at case temperature. With a low on-resistance of 5.3mOhm at 17.5A and 10V Vgs, the FDMC7678 minimizes conduction losses. It offers a maximum gate charge of 39 nC and input capacitance of 2410 pF, facilitating efficient switching performance. The MOSFET is packaged in an 8-MLP (3.3x3.3) for surface mounting, with a maximum power dissipation of 2.3W (Ta) or 31W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in power management, automotive, and industrial systems. The FDMC7678 supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 15 V |
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