FDMC7660-P
MOSFET N-CH 30V 30A/40A DLCOOL33Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FDMC7660-P is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and supports continuous drain currents of 20A at ambient temperature and 40A at case temperature. With a low on-resistance of 2.2mOhm at 20A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 2.3W (Ta) and 41W (Tc), with excellent thermal performance facilitated by its 8-PQFN (3.3x3.3) package. Key parameters include a Vgs(th) of 2.5V (max) and a gate charge of 86 nC (max). Operating across a wide temperature range of -55°C to 150°C, this component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PQFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4830 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
