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FDMC7570S-PC01

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FDMC7570S-PC01

MOSFET N-CH 25V 27A/40A POWER33

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number FDMC7570S-PC01, from the PowerTrench®, SyncFET™ series. This device offers a 25V drain-source voltage (Vdss) and features a continuous drain current (Id) of 27A at 25°C ambient and 40A at 25°C case temperature. The low on-resistance is specified at 2mOhm maximum at 27A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 4410 pF at 13V. Designed for surface mounting, it is supplied in an 8-PQFN (3.3x3.3) package. Maximum power dissipation is 2.3W (Ta) or 59W (Tc). This MOSFET is suitable for applications in power management, computing, and industrial systems.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 27A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4410 pF @ 13 V

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