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FDMC6688P

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FDMC6688P

MOSFET P-CH 20V 14A/56A 8PQFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® FDMC6688P is a P-Channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 14A at ambient temperature (Ta) and 56A at case temperature (Tc). The low on-resistance (Rds On) of 6.5mOhm at 14A and 4.5V, combined with a maximum gate charge (Qg) of 61 nC at 4.5V, ensures reduced conduction and switching losses. The FDMC6688P offers excellent thermal performance with a maximum power dissipation of 2.3W (Ta) and 30W (Tc), enabling robust operation across a wide temperature range of -55°C to 150°C. Its 8-PQFN (3.3x3.3) package, also known as Power33, facilitates efficient heat transfer and compact board design. This MOSFET is suitable for demanding applications in the automotive, industrial, and consumer electronics sectors. The drive voltage range is specified from 1.8V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Input capacitance (Ciss) is a maximum of 7435 pF at 10V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 14A, 4.5V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7435 pF @ 10 V

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