FDMC6686P
MOSFET P-CH 20V 18A/56A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMC6686P is a P-Channel Power Trench MOSFET designed for demanding applications. This device features a Vds of 20V and offers continuous drain current capabilities of 18A at ambient temperature and 56A at case temperature. Its low Rds(on) of 4mOhm at 18A and 4.5V gate drive voltage, coupled with a maximum power dissipation of 40W (Tc), makes it suitable for power management solutions. The FDMC6686P utilizes an 8-PQFN (3.3x3.3), Power33 package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 122 nC at 4.5V and input capacitance (Ciss) of 13200 pF at 10V. Operating temperature ranges from -55°C to 150°C. This component finds application in various industries including automotive and industrial power systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 18A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 10 V |
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