FDMC6679AZ-P
MOSFET P-CH 30V 11.5A/20A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel PowerTrench® MOSFET, part number FDMC6679AZ-P, offers a 30V drain-source breakdown voltage. This device features a low Rds(on) of 10mOhm at 11.5A and 10V Vgs. Continuous drain current is rated at 11.5A (Ta) and 20A (Tc), with power dissipation capabilities of 2.3W (Ta) and 41W (Tc). The FDMC6679AZ-P utilizes a P-Channel MOSFET technology and is supplied in an 8-WDFN (3.3x3.3) package, suitable for surface mount applications. Typical operating temperature range is -55°C to 150°C. It is packaged in a Tape & Reel (TR). This component is commonly found in power management applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3970 pF @ 15 V |
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