FDMC6679AZ
MOSFET P-CH 30V 11.5A/20A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMC6679AZ is a P-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11.5A at ambient temperature, increasing to 20A when measured at the case. The low on-resistance (Rds On) of 10mOhm at 11.5A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum power dissipation of 2.3W (Ta) and 41W (Tc), it is suitable for demanding thermal environments. The FDMC6679AZ utilizes an 8-MLP (3.3x3.3) package for compact integration. Key electrical characteristics include a gate charge (Qg) of 91 nC (max) and input capacitance (Ciss) of 3970 pF (max). This component is widely utilized in industrial, automotive, and consumer electronics power management solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3970 pF @ 15 V |
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