This onsemi N-Channel Power MOSFET, part number FDMC6675BZ-T, is engineered for high-performance applications. It offers a continuous drain current (Id) of 9.5A at ambient temperature (Ta) and 20A at case temperature (Tc). The device supports a gate-source voltage (Vgs) up to ±25V, ensuring robust control. This component is suitable for use in power management solutions, automotive electronics, and industrial control systems where efficient power switching is critical. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | - |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±25V |
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