FDMC5614P-L701
MOSFET P-CH 60V 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDMC5614P-L701: This P-Channel PowerTrench® MOSFET is designed for high-efficiency power management applications. It features a 60V drain-source breakdown voltage (Vdss) and supports continuous drain currents of 5.7A at ambient temperature and 13.5A at case temperature. The device offers a maximum on-resistance (Rds On) of 100mOhm at 5.7A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20 nC and input capacitance (Ciss) of 1055 pF. The FDMC5614P-L701 is housed in an 8-WDFN (3.3x3.3) package, suitable for surface mounting. Its robust thermal performance allows for power dissipation up to 2.1W (Ta) and 42W (Tc), operating across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power switching applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF @ 30 V |
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