FDMC5614P-B8
FET -60V 100.0 MOHM MLP33Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel PowerTrench® MOSFET, part number FDMC5614P-B8, offers a -60V drain-source voltage and a maximum On-Resistance of 100mOhm at 5.7A and 10V Vgs. This device features a continuous drain current of 5.7A at 25°C ambient and 13.5A at 25°C case temperature. Power dissipation is rated at 2.1W (Ta) and 42W (Tc). The FDMC5614P-B8 is housed in an 8-WDFN (3.3x3.3) surface mount package and operates from -55°C to 150°C. Key electrical characteristics include a maximum gate charge of 20 nC at 10V Vgs and an input capacitance of 1055 pF at 30V Vds. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF @ 30 V |
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