FDMC5614P
MOSFET P-CH 60V 5.7A/13.5A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMC5614P, a P-Channel PowerTrench® MOSFET, offers a 60V drain-to-source voltage and supports continuous drain currents of 5.7A (ambient) and 13.5A (case). This device features a low on-resistance of 100mOhm maximum at 5.7A and 10V Vgs. It is housed in a compact 8-MLP (3.3x3.3) package, ideal for surface mount applications. Key electrical characteristics include a gate charge of 20 nC maximum at 10V Vgs and an input capacitance of 1055 pF maximum at 30V Vds. The maximum power dissipation is 2.1W (ambient) and 42W (case). This component is suitable for power management solutions in the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF @ 30 V |
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