FDMC510P-F106
MOSFET P-CH 20V 12A/18A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMC510P-F106 is a P-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device offers a 20V drain-source breakdown voltage (Vdss) and is rated for a continuous drain current of 12A at ambient temperature and 18A at case temperature. The low on-resistance, specified as 8mOhm maximum at 12A and 4.5V Vgs, contributes to reduced conduction losses. With a maximum gate charge (Qg) of 116 nC at 4.5V Vgs, it supports efficient switching performance. The component features a maximum power dissipation of 2.3W at ambient and 41W at case temperature, making it suitable for demanding thermal environments. The 8-PowerWDFN package, with dimensions of 3.3x3.3mm, facilitates compact board designs. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7860 pF @ 10 V |
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