FDMC4D9P20X8
MOSFET P-CH 20V 18A/75A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMC4D9P20X8 is a P-Channel PowerTrench® MOSFET designed for efficient power management. This device offers a 20V drain-source breakdown voltage and a continuous drain current capability of 18A at ambient temperature and 75A at case temperature. With a low on-resistance of 4.9mOhm at 18A and 4.5V Vgs, it minimizes conduction losses. Key parameters include a gate charge of 109nC at 4.5V and input capacitance of 10550pF at 10V. The device supports a wide gate drive range from 1.8V to 4.5V and has a maximum gate-source voltage of ±12V. Maximum power dissipation is rated at 2.4W (Ta) and 40W (Tc). The FDMC4D9P20X8 is housed in a compact 8-PQFN (3.3x3.3) package, suitable for surface mounting. It operates across an extended temperature range of -55°C to 150°C. This component finds application in various industries including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 18A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-PQFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10550 pF @ 10 V |
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