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FDMC4435BZ-F127-L701

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FDMC4435BZ-F127-L701

SINGLE ST3 P Z MLP3.3X3.3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMC4435BZ-F127-L701 is a P-Channel PowerTrench® MOSFET designed for high-density power management applications. This device features a 30V drain-source voltage rating and supports a continuous drain current of 8.5A at a typical ambient temperature of 25°C, scaling to 18A under thermal management at the case. With a low on-resistance of 20mOhm at 8.5A and 10Vgs, it minimizes conduction losses, delivering a maximum power dissipation of 2.3W (Ta) and 31W (Tc). The MOSFET utilizes a 3.3x3.3mm 8-MLP package, facilitating compact board layouts. Key electrical characteristics include a gate charge (Qg) of 53 nC (max) at 10Vgs and input capacitance (Ciss) of 2045 pF (max) at 15Vds. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in computing, communications, and industrial power systems. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 8.5A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2045 pF @ 15 V

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