FDMC4435BZ-F126
MOSFET P-CH 30V 8.5A/18A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMC4435BZ-F126 is a P-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 30 V drain-source breakdown voltage and offers continuous drain current capabilities of 8.5 A at a typical ambient temperature (Ta) and 18 A at a case temperature (Tc). With a low on-resistance of 20 mOhm maximum at 8.5 A and 10 V Vgs, it minimizes conduction losses. The FDMC4435BZ-F126 is housed in a compact 8-MLP (3.3x3.3) package, suitable for surface mounting. Its thermal performance is characterized by a maximum power dissipation of 2.3 W (Ta) and 31 W (Tc). Key parameters include a gate charge (Qg) of 46 nC (max), input capacitance (Ciss) of 2045 pF (max), and a threshold voltage (Vgs(th)) of 3 V (max). This component is widely utilized in power supplies, battery management systems, and motor control within the computing, industrial, and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2045 pF @ 15 V |
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